Pressure dependence of the indirect band gap ofAlxGa1−xAs alloys (x=0.70 and 0.92) at low temperatures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.2985/fulltext
Reference37 articles.
1. Pressure dependence of shallow bound states in gallium arsenide
2. Pressure dependence of direct and indirect optical absorption in GaAs
3. Effect of pressure on the low-temperature exciton absorption in GaAs
4. Optical evidence of the direct-to-indirect-gap transition in GaAs-AlAs short-period superlattices
5. Photoluminescence studies of GaAs/AlAs short period superlattices
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