First-principles study of electronic properties of biaxially strained silicon: Effects on charge carrier mobility
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.78.245204/fulltext
Reference42 articles.
1. Strained silicon NMOS with nickel-silicide metal gate
2. A 90-nm Logic Technology Featuring Strained-Silicon
3. A Logic Nanotechnology Featuring Strained-Silicon
4. Intrinsic Current−Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping
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