Density-functional study of adsorption of Co on Si(100)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.245332/fulltext
Reference22 articles.
1. Silicides for integrated circuits: TiSi2 CoSi2
2. Preparation-dependent Co/Si(100) (2×1) interface growth: Spontaneous silicide formation versus interstitial-site mechanism
3. A new leakage mechanism of Co salicide and optimized process conditions [for CMOS]
4. Nucleation and growth of CoSi2 on Si(100) studied by scanning tunneling microscopy
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3. Evidence of Low Schottky Barrier Effects and the Role of Gap States in the Electronic Transport through Individual CoSi2 Silicide Nanoislands at Low Temperature (9 K);The Journal of Physical Chemistry C;2015-09-18
4. H-Bond Interaction-Enhanced Dissociation of H2O on Si(100)-2×1;The Journal of Physical Chemistry C;2014-10-13
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