H-Bond Interaction-Enhanced Dissociation of H2O on Si(100)-2×1-Reference-Cited by-同舟云学术

H-Bond Interaction-Enhanced Dissociation of H2O on Si(100)-2×1

Published:2014-10-13 Issue:42 Volume:118 Page:24603-24610
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Huang Xiang¹,Tian Ren-Yu¹,Yang Xiao-Bao¹,Zhao Yu-Jun¹

Affiliation:

1. Department of Physics, ‡Key Laboratory of Advanced Energy Storage Materials of Guangdong Province, and §School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, P. R. China

Funder

National Natural Science Foundation of China

Ministry of Education of the People's Republic of China

State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology

KLGHEI

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp508094t

Reference39 articles.

1. Density-functional study of adsorption of Co on Si(100)

2. Adsorption-enhanced reactivity of the In/Si(001) system

3. Guided Self-Assembly of Metal Atoms on Silicon Using Organic-Molecule Templating

4. The surface as molecular reagent: organic chemistry at the semiconductor interface

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