Evidence of Low Schottky Barrier Effects and the Role of Gap States in the Electronic Transport through Individual CoSi2 Silicide Nanoislands at Low Temperature (9 K)-Reference-Cited by-同舟云学术

Evidence of Low Schottky Barrier Effects and the Role of Gap States in the Electronic Transport through Individual CoSi2 Silicide Nanoislands at Low Temperature (9 K)

Published:2015-09-18 Issue:39 Volume:119 Page:22700-22708
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Yengui Mayssa¹,Riedel Damien¹

Affiliation:

1. Institut des Sciences Moléculaires d’Orsay (ISMO), CNRS, Univ Paris Sud, Université Paris-Saclay, F-91405 Orsay, France

Funder

Fédération de Recherche LUmière MATière

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.5b06816

Reference64 articles.

1. Surface structure and electronic states of epitaxialβ−FeSi2(100)/Si(001) thin films: Combined quantitative LEED,ab initioDFT, and STM study

2. Electrical contacts to one- and two-dimensional nanomaterials

3. Imaging Schottky Barriers and Ohmic Contacts in PbS Quantum Dot Devices

4. UHV-STM manipulation of single flat gold nano-islands for constructing interconnection nanopads on MoS2

5. Ultrahigh vacuum scanning tunneling microscope manipulation of single gold nanoislands on MoS[sub 2] for constructing planar nanointerconnects

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