Electrical and optical properties of iron in GaN, AlN, and InN-Reference-Cited by-同舟云学术

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Electrical and optical properties of iron in GaN, AlN, and InN

Published:2019-05-14 Issue:20 Volume:99 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Wickramaratne Darshana,Shen Jimmy-Xuan,Dreyer Cyrus E.,Alkauskas Audrius,Van de Walle Chris G.

Funder

U.S. Department of Energy

National Research Council

American Physical Society

Simons Foundation

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.99.205202/fulltext

Reference72 articles.

1. History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination

2. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

3. Semi-insulating GaN substrates for high-frequency device fabrication

4. Dilute ferromagnetic semiconductors: Physics and spintronic structures

5. Magnetic properties of Fe‐based diluted magnetic semiconductors (invited)

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2. Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential;Materials;2024-06-25

3. FeGa (0/−) acceptor level as a reference energy level in dilute AlxGa1−xN;Applied Physics Letters;2024-06-03

4. Dopants and defects in ultra-wide bandgap semiconductors;Current Opinion in Solid State and Materials Science;2024-06

5. The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1−xN layers;Journal of Applied Physics;2024-05-01

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