3dtransition metals on InP(110): A comparative study of reactive interface evolution
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.37.6019/fulltext
Reference24 articles.
1. The structure and properties of metal-semiconductor interfaces
2. Summary Abstract: Metal‐induced impurity states at the InP/transition‐metal interface
3. The interaction of Al, Mn, and Ag with clean and oxidized GaAs and InP(110) surfaces
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