Summary Abstract: Metal‐induced impurity states at the InP/transition‐metal interface-Reference-Cited by-同舟云学术

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Summary Abstract: Metal‐induced impurity states at the InP/transition‐metal interface

Published:1987-07 Issue:4 Volume:5 Page:1528-1530
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Schäffler F.,Drube W.,Hughes G.,Ludeke R.,Rieger D.,Himpsel F. J.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.574598

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Introductory guide to the application of XPS to epitaxial films and heterostructures;Journal of Vacuum Science & Technology A;2020-12

2. The Metal-Semiconductor Interface;Electronic Structure;2000

3. Schottky barrier formation in a Au/Si nanoscale system: A local density approximation study;Journal of Applied Physics;1997-03-15

4. Investigation of Schottky barrier formation for transition metal overlayers on InP and GaP(110) surfaces;Surface Science;1992-05

5. Theoretical approaches to the Schottky barrier problem;Applied Surface Science;1992-01

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