Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy-Reference-Cited by-同舟云学术

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Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy

Published:2016-12-19 Issue:23 Volume:94 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Marcinkevičius Saulius,Uždavinys Tomas K.,Foronda Humberto M.,Cohen Daniel A.,Weisbuch Claude,Speck James S.

Funder

Vetenskapsrådet

U.S. Department of Energy

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.94.235205/fulltext

Reference44 articles.

1. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

2. Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy

3. Determination of satellite valley position in GaN emitter from photoexcited field emission investigations

4. Auger recombination rates in nitrides from first principles

5. Influence of exchange and correlation on structural and electronic properties of AlN, GaN, and InN polytypes

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Injection mechanisms in a III -nitride light-emitting diode as seen by self-emissive electron microscopy;Physical Review Applied;2023-12-26

2. Detection of hot electrons originating from an upper valley at ∼1.7eV above the Γ valley in wurtzite GaN using electron emission spectroscopy;Physical Review B;2023-01-06

3. Ab initio Methods for Electronic Transport in Semiconductors and Nanostructures;Springer Handbook of Semiconductor Devices;2022-11-11

4. Electron velocity distribution on the abrupt change in source–drain current of GaN devices;International Journal of Modern Physics B;2022-07-01

5. Monte Carlo simulation of the relationship between intervalley energy difference and electron transport in GaN devices;Pramana;2022-06-30

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