Ab initioinvestigation of boron diffusion paths in germanium
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.77.075208/fulltext
Reference36 articles.
1. Grown-In Lattice Defects and Diffusion in Czochralski-Grown Germanium
2. Activation and diffusion studies of ion-implanted p and n dopants in germanium
3. Diffusion of boron in germanium at 800–900°C
4. Coulomb blockade of the Aharonov-Bohm effect in GaAs/AlxGa1−xAs quantum dots
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1. The pn Junctions of Epitaxial Germanium on Silicon by Solid Phase Doping;IEEE Transactions on Electron Devices;2014-07
2. B-doping in Ge by excimer laser annealing;Journal of Applied Physics;2013-03-21
3. Radiation-enhanced self- and boron diffusion in germanium;Physical Review B;2013-03-11
4. Mechanisms of boron diffusion in silicon and germanium;Journal of Applied Physics;2013-01-21
5. Role of point defects on B diffusion in Ge;Materials Science in Semiconductor Processing;2012-12
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