Semianalytical model for simulation of electronic properties of narrow-gap strained semiconductor quantum nanostructures
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.77.085305/fulltext
Reference18 articles.
1. Eight-bandk⋅pmodel of strained zinc-blende crystals
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3. Electronic and optical properties ofInAs∕InPquantum dots on InP(100) andInP(311)Bsubstrates: Theory and experiment
4. InAsSb∕InP quantum dots for midwave infrared emitters: A theoretical study
5. Cylindrically shaped zinc-blende semiconductor quantum dots do not have cylindrical symmetry: Atomistic symmetry, atomic relaxation, and piezoelectric effects
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