Spectroscopic theoretical study of the atomic reconstruction ofGaN(101¯0)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.12641/fulltext
Reference15 articles.
1. Prospects for device implementation of wide band gap semiconductors
2. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
3. Electrical properties of GaAs/GaN/GaAs semiconductor‐insulator‐semiconductor structures
4. Band Structure and Reflectivity of GaN
5. Ab initioprediction of GaN (101¯0) and (110) anomalous surface relaxation
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