Vibrational properties of AlN grown on (111)-oriented silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.125313/fulltext
Reference52 articles.
1. III–nitrides: Growth, characterization, and properties
2. Deposition of SiC and AlN thin films by laser ablation
3. Microstructure and photoluminescence of GaN grown on Si(111) by plasma‐assisted molecular beam epitaxy
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