Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors-Reference-Cited by-同舟云学术

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Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors

Published:2016-05-25 Issue:20 Volume:93 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Alkauskas Audrius,Dreyer Cyrus E.,Lyons John L.,Van de Walle Chris G.

Funder

U.S. Department of Energy

Office of Science

Basic Energy Sciences

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.93.201304/fulltext

Reference40 articles.

1. Statistics of the Recombinations of Holes and Electrons

2. Electron-Hole Recombination in Germanium

3. Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes

4. Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes

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