Domain boundaries in the GaAs(001)-2×4surface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.085321/fulltext
Reference27 articles.
1. Reflection high energy electron diffraction characteristic absences in GaAs(100) (2×4)–As: A tool for determining the surface stoichiometry
2. Reflectance-difference spectroscopy of (001) GaAs surfaces in ultrahigh vacuum
3. Atomic structure of theGaAs(001)−(2×4)surface under As flux
4. Determination of the surface structures of the GaAs(001)-(2×4) As-rich phase
5. The As-terminated reconstructions formed by GaAs(001): a scanning tunnelling microscopy study of the (2 × 4) and c(4 × 4) surfaces
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1. In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors;Japanese Journal of Applied Physics;2018-04-16
2. Structure of domain boundaries: group III–V compounds: GaAs;Physics of Solid Surfaces;2018
3. Energetic, electronic, and magnetic properties of Mn pairs on reconstructed (001) GaAs surfaces;Physical Review B;2017-03-22
4. Ab initio-Based Approach to Crystal Growth;Handbook of Crystal Growth;2015
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