Shubnikov–de Haas oscillations under hot-electron conditions in Si/Si1−xGexheterostructures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.10417/fulltext
Reference38 articles.
1. Ultrathin SimGenstrained layer superlattices-a step towards Si optoelectronics
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5. 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
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