Fast Energy Relaxation of Hot Carriers Near the Dirac Point of Graphene-Reference-Cited by-同舟云学术

Fast Energy Relaxation of Hot Carriers Near the Dirac Point of Graphene

Published:2013-08-26 Issue:9 Volume:13 Page:4305-4310
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Somphonsane R.¹,Ramamoorthy H.²,Bohra G.²,He G.²,Ferry D. K.³⁴,Ochiai Y.⁴,Aoki N.⁴,Bird J. P.²⁴

Affiliation:

1. Department of Physics, University at Buffalo, Buffalo, New York 14260-1500, United States

2. Department of Electrical Engineering, University at Buffalo, Buffalo, New York 14260-1900, United States

3. School of Electrical, Computer, and Energy Engineering, and Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287-5706, United States

4. Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl4020777

Reference44 articles.

1. Current saturation in zero-bandgap, top-gated graphene field-effect transistors

2. Energy Dissipation in Graphene Field-Effect Transistors

3. Transport Properties of Graphene in the High-Current Limit

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance limits due to thermal transport in graphene single-photon bolometers;Physical Review Applied;2024-01-04

2. Quantum Oscillations of the Energy Loss Rate of Hot Electrons in Graphene at Strong Magnetic Fields;Materials;2023-03-12

3. Dynamics and physical process of hot carriers in optoelectronic devices;Nano Energy;2022-05

4. High-Responsivity, Low-Leakage Current, Ultra-Fast Terahertz Detectors Based on a GaN High-Electron-Mobility Transistor with Integrated Bowtie Antennas;Sensors;2022-01-25

5. Phonon drag thermopower and energy loss rate in single and bilayer graphene due to piezoelectric surface acoustic phonons in Bloch-Gruneisen regime;Physica E: Low-dimensional Systems and Nanostructures;2021-07