Temperature and many-body effects on the intersubband transition in a GaAs/Al0.3Ga0.7As multiple quantum well
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.11618/fulltext
Reference23 articles.
1. Origin of the blueshift in the intersubband infrared absorption in GaAs/Al0.3Ga0.7As multiple quantum wells
2. Intersubband infrared absorption in a GaAs/Al0.3Ga0.7As quantum well structure
3. The temperature dependence of intersubband absorption in a barrier-doped GaAs/Al0.3Ga0.7As quantum well structure
4. Enhancement of nonparabolicity effects in a quantum well
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1. Landau levels and shallow donor states in GaAs/AlGaAs multiple quantum wells at megagauss magnetic fields;Physical Review B;2017-03-27
2. Temperature dependence of mid-infrared intersubband absorption in AlGaN/GaN multiple quantum wells;Applied Physics Letters;2016-02-01
3. Doping dependent blue shift and linewidth broadening of intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells;Applied Physics Letters;2015-09-14
4. Electron–electron interaction in Multiple Quantum Wells;Physica E: Low-dimensional Systems and Nanostructures;2012-07
5. Ultrafast all-optical switching and demultiplexing using intersubband transitions in InGaAs/AlAsSb quantum well structures;SPIE Proceedings;2001-10-30
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