Temperature dependence of mid-infrared intersubband absorption in AlGaN/GaN multiple quantum wells-Reference-Cited by-同舟云学术

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Temperature dependence of mid-infrared intersubband absorption in AlGaN/GaN multiple quantum wells

Published:2016-02-01 Issue:5 Volume:108 Page:052102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kotani Teruhisa¹²³^ORCID,Arita Munetaka¹,Hoshino Katsuyuki²,Arakawa Yasuhiko¹²

Affiliation:

1. Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan

2. Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan

3. Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japan

Funder

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference35 articles.

1. Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-µ m Intersubband Transition in AlGaN/GaN Quantum Wells

2. Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ∼1.75–4.2 μm

3. Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers

4. GaN-based terahertz quantum cascade lasers

5. Quantum cascade emission in the III-nitride material system designed with effective interface grading

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2. Intersubband optical absorption in ZnO/MgZnO triple quantum well structures;Applied Physics B;2022-03-22

3. Structural and optical properties of nonpolar m- and a-plane GaN/AlGaN heterostructures for narrow-linewidth mid-infrared intersubband transitions;Applied Physics Letters;2020-05-18

4. Acoustic phonons in multilayer nitride-based AlN/GaN resonant tunneling structures;Nano Express;2020-03-20

5. Spectrum and normalized modes of acoustic phonons in multilayer nitride-based nanostructure;The European Physical Journal B;2020-03

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