The temperature dependence of intersubband absorption in a barrier-doped GaAs/Al0.3Ga0.7As quantum well structure-Reference-Cited by-同舟云学术

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The temperature dependence of intersubband absorption in a barrier-doped GaAs/Al0.3Ga0.7As quantum well structure

Published:1990-01 Issue:1 Volume:8 Page:63-67
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Szmulowicz F.,Manasreh M.O.,Fischer D.W.,Madarasz F.,Evans K.R.,Stutz E.,Vaughan T.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well

2. Tunneling lifetime broadening of the quantum well intersubband photoconductivity spectrum

3. Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguides

4. Intersubband absorption in GaAs/AlGaAs quantum wells between 4.2K and room temperature

5. Infrared intersubband absorption in GaAs/AlAs multiple quantum wells

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Doping dependent frequency response of MQW infrared photodetector;Superlattices and Microstructures;2017-04

2. Trapping mechanism to account for persistent photoeffects in heavily doped GaAs/AlGaAs multiple quantum wells;Journal of Applied Physics;1996-05-01

3. Temperature and many-body effects on the intersubband transition in a GaAs/Al0.3Ga0.7As multiple quantum well;Physical Review B;1994-10-15

4. Intersubband Infrared Absorption in a GaAs/Al0.3Ga0.7As Multiple Quantum Well;NATO ASI Series;1992

5. Origin of the blueshift in the intersubband infrared absorption in GaAs/Al0.3Ga0.7As multiple quantum wells;Physical Review B;1991-04-15

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