Recombination dynamics in pseudomorphic and partially relaxedIn0.23Ga0.77As/GaAs quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.41.10120/fulltext
Reference24 articles.
1. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
2. Low‐threshold continuous laser operation (300–337 °K) of multilayer MO‐CVD AlxGa1−xAs‐GaAs quantum‐well heterostructures
3. An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT
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1. Retraction: “Dependence of structural and optical properties of In0.23Ga0.77As/GaAs quantum wells on misfit dislocations: Different critical thickness for dislocation generation and degradation of optical properties” [J. Vac. Sci. Technol. B 8, 751–757 (1990)];Journal of Vacuum Science & Technology B;2023-11-20
2. 3D Bragg Coherent Diffraction Imaging of Extended Nanowires: Defect Formation in Highly Strained InGaAs Quantum Wells;ACS Nano;2022-11-15
3. Photoluminescence Characterization of Structural and Electronic Properties of Semiconductor Quantum Wells;Characterization of Semiconductor Heterostructures and Nanostructures;2013
4. Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells;Journal of Applied Physics;2012-01
5. Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers;Applied Physics Letters;2001-02-26
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