Optical spectroscopy of a double-barrier resonant-tunneling structure containing a narrow-gap, strained-layer, quantum-well region
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.1505/fulltext
Reference23 articles.
1. Determination of Charge Accumulation and Its Characteristic Time in Double-Barrier Resonant Tunneling Structures Using Steady-State Photoluminescence
2. Photoluminescent determination of charge accumulation in resonant tunneling structures
3. Younget al. reply
4. Excitation mechanisms of photoluminescence in double-barrier resonant-tunneling structures
5. Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields
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1. Tuning the electron density in structures for vertical quantum dot artificial atom applications;Semiconductor Science and Technology;2005-03-15
2. Optical and electrical investigation of an asymmetric strained-layer double-barrier resonant-tunnelling structure;Semiconductor Science and Technology;1994-09-01
3. Intersubband optical bistability induced by resonant tunneling in an asymmetric double quantum well;Physical Review B;1993-10-15
4. Elastic and inelastic tunneling in a strained-layer double-barrier resonant-tunneling structure;Physical Review B;1993-08-15
5. Optimization of the growth parameters for the molecular‐beam epitaxial growth of strained In0.16Ga0.84As/Al0.33Ga0.67As single quantum‐well structures;Applied Physics Letters;1993-08-09
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