Photoluminescent determination of charge accumulation in resonant tunneling structures
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.62.1207/fulltext
Reference1 articles.
1. Determination of Charge Accumulation and Its Characteristic Time in Double-Barrier Resonant Tunneling Structures Using Steady-State Photoluminescence
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1. High-Frequency Resonant-Tunneling Devices;Semiconductors and Semimetals;1994
2. Tunnelling dynamics of holes in GaAs/Al0.33Ga0.67As double-barrier resonant tunnelling structures studied by time-resolved photoluminescence spectroscopy;Journal of Physics: Condensed Matter;1993-04-26
3. Tunneling of Electrons and Holes in Asymmetric Double Quantum Wells;Ultrashort Processes in Condensed Matter;1993
4. Optical spectroscopy of a double-barrier resonant-tunneling structure containing a narrow-gap, strained-layer, quantum-well region;Physical Review B;1992-07-15
5. Optical investigation of a very asymmetric double-barrier resonant-tunneling structure;Physical Review B;1992-03-15
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