Tunnelling dynamics of holes in GaAs/Al0.33Ga0.67As double-barrier resonant tunnelling structures studied by time-resolved photoluminescence spectroscopy-Reference-Cited by-同舟云学术

Tunnelling dynamics of holes in GaAs/Al0.33Ga0.67As double-barrier resonant tunnelling structures studied by time-resolved photoluminescence spectroscopy

Published:1993-04-26 Issue:17 Volume:5 Page:2825-2835
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Lovering D J,Denton G J,Gregory A,Phillips R T,Skolnick M S,Higgs A W,Simmonds P E,Smith G W,Whitehouse C R

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://stacks.iop.org/0953-8984/5/i=17/a=015/pdf

Reference21 articles.

1. Investigation of optical processes in a semiconductor 2D electron plasma

2. Resonant tunneling in magnetic field: Evidence for space-charge buildup

3. Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields

4. Determination of Charge Accumulation and Its Characteristic Time in Double-Barrier Resonant Tunneling Structures Using Steady-State Photoluminescence

5. Photoluminescent determination of charge accumulation in resonant tunneling structures

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1. Role ofXvalley on the dynamics of electron transport through a GaAs/AlAs double-barrier structure;Physical Review B;2008-10-08

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3. Time-resolved photoluminescence spectroscopy of tunnelling processes in a bipolar AlAs/GaAs resonant-tunnelling structure;Semiconductor Science and Technology;2000-06-23

4. Time dependence of quantum well recombination luminescence in a bipolar AlAs/GaAs resonant tunnelling structure;Microelectronic Engineering;1998-08

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