Time-resolved photoluminescence spectroscopy of tunnelling processes in a bipolar AlAs/GaAs resonant-tunnelling structure-Reference-Cited by-同舟云学术

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Time-resolved photoluminescence spectroscopy of tunnelling processes in a bipolar AlAs/GaAs resonant-tunnelling structure

Published:2000-06-23 Issue:7 Volume:15 Page:665-675
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Romandic I,Bouwen A,Goovaerts E,Hoof C Van,Borghs G

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Determination of Charge Accumulation and Its Characteristic Time in Double-Barrier Resonant Tunneling Structures Using Steady-State Photoluminescence

2. Photoluminescence and space‐charge distribution in a double‐barrier diode under operation

3. Charge accumulation in a double-barrier resonant-tunneling structure studied by photoluminescence and photoluminescence-excitation spectroscopy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carrier injection effects on exciton dynamics in GaAs/AlAs resonant-tunneling diodes;EPL (Europhysics Letters);2009-03

2. Role ofXvalley on the dynamics of electron transport through a GaAs/AlAs double-barrier structure;Physical Review B;2008-10-08

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