Elastic and inelastic tunneling in a strained-layer double-barrier resonant-tunneling structure
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.4487/fulltext
Reference16 articles.
1. Realization and analysis of GaAs/AlAs/In0.1Ga0.9As based resonant tunneling diodes with high peak‐to‐valley ratios at room temperature
2. Influence of spacer layer thickness on the current‐voltage characteristics of AlGaAs/GaAs and AlGaAs/InGaAs resonant tunneling diodes
3. High performance resonant tunnelling structures on GaAs substrates
4. Optical spectroscopy of a double-barrier resonant-tunneling structure containing a narrow-gap, strained-layer, quantum-well region
5. Optical investigation of highly strained InGaAs‐GaAs multiple quantum wells
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1. Tunneling Properties in GaAs/Al0.33Ga0.67As/InxGa1-xAs Double-Barrier Resonant Tunneling Structures;Advanced Materials Research;2011-12
2. Simulation of GaAs/AlxGa1-xAs/InyGa1-y As Double-Barrier Resonant Tunneling Structures;Advanced Materials Research;2011-11
3. Magneto-tunneling effect in weakly coupled GaAs/AlGaAs/InGaAs double quantum well tunneling structure;Acta Physica Sinica;2010
4. Tuning the electron density in structures for vertical quantum dot artificial atom applications;Semiconductor Science and Technology;2005-03-15
5. Inter-Landau-level transitions near the threshold of 2D-2D tunneling;Physical Review B;1997-07-15
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