Nonrectangular quantum wells as a basis for studying the band offsets at GaAs-Ga1−xAlxAs interfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.32.3863/fulltext
Reference11 articles.
1. Parabolic quantum wells with theGaAs−AlxGa1−xAssystem
2. Energy-gap discontinuities and effective masses forGaAs−AlxGa1−xAsquantum wells
3. Positions of the sub-band minima in GaAs(AlGa)As quantum well heterostructures
4. Determination of heterojunction band offsets by capacitance‐voltage profiling through nonabrupt isotype heterojunctions
5. Concentration of electrons in selectively doped GaAlAs/GaAs heterojunction and its dependence on spacer‐layer thickness and gate electric field
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3. Envelope Function Approximation (EFA) Bandstructure Calculations for III-V Non-square Stepped Alloy Quantum Wells Incorporating Ultra-narrow (~5Å) Epitaxial Layers;Physica Scripta;2000-02-01
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