Configurational statistical model for the damaged structure of silicon oxide after ion implantation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.14845/fulltext
Reference20 articles.
1. Novel characterization of implant damage in SiO2by nuclear‐deposited energy
2. The structure of vitreous silica
3. Structural and electrical damage induced by high‐energy heavy ions in SiO2/Si structures
4. Radiation damage and the role of structure in amorphous SiO2
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