Confirmation of the EPR identification ofCr4+3d2inp-type Cr-doped GaAs by means of applied uniaxial stress
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.26.2296/fulltext
Reference9 articles.
1. Chromium as a hole trap in GaP and GaAs
2. New EPR data and photoinduced changes in GaAs: Cr. Reinterpretation of the "second-acceptor" state asCr4+
3. Interpretation of luminescence in GaAs : Cr : 0.839 eV and 0.574 eV lines
4. New EPR data for chromium in electron-irradiated p-type GaAs: the observation of Cr complexes
5. Effects of uniaxial stress and temperature variation on theCr2+center in GaAs
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1. Electron paramagnetic resonance of Cr[sup 2+] and Cr[sup 4+] ions in CdGeAs[sub 2] crystals;Journal of Applied Physics;2003
2. Chapter 1 EPR and ENDOR Studies of Defects in Semiconductors;Semiconductors and Semimetals;1998
3. Electron-paramagnetic-resonance identification of transition-metal (Cr,Fe)–shallow-impurity (S,Zn) pairs in GaP;Physical Review B;1992-02-15
4. Theoretical confirmation of the identification of the Cr4+]3d 2 center in P-type Cr-doped GaAs by calculating the spin-lattice coupling coeeficients;Radiation Effects and Defects in Solids;1991-09
5. Spin lattice coupling coefficients of Co2+ ion in cubic ZnS Crystal;Il Nuovo Cimento D;1991-06
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