New EPR data and photoinduced changes in GaAs: Cr. Reinterpretation of the "second-acceptor" state asCr4+
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.22.3141/fulltext
Reference14 articles.
1. EPR ofCr(3d3)in GaAs—evidence for strong Jahn-Teller effects
2. EPR ofCr2+(3d4) in gallium arsenide: Jahn-Teller distortion and photoinduced charge conversion
3. Deep traps in semi-insulating GaAs: Cr revealed by photo-sensitive ESR
4. ESR assessment of 3d7 transition metal impurity states in GaP, GaAs and InP
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1. Theoretical investigation of the local lattice structure of Cr2+ ion at tetragonal sites in GaAs semiconductor;Journal of Alloys and Compounds;2009-05
2. Electron paramagnetic resonance of Cr[sup 2+] and Cr[sup 4+] ions in CdGeAs[sub 2] crystals;Journal of Applied Physics;2003
3. Theoretical studies of theg-shift for Cr4+ions in GaN crystal from crystal-field and charge-transfer mechanisms;Journal of Physics: Condensed Matter;2001-08-02
4. Chapter 1 EPR and ENDOR Studies of Defects in Semiconductors;Semiconductors and Semimetals;1998
5. Zero-field-splitting parameters ofCr2+ion in GaAs;Physical Review B;1995-05-15
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