Zero-field-splitting parameters ofCr2+ion in GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.14176/fulltext
Reference55 articles.
1. EPR ofCr2+(3d4) in gallium arsenide: Jahn-Teller distortion and photoinduced charge conversion
2. Effects of uniaxial stress and temperature variation on theCr2+center in GaAs
3. Pulsed far-infrared spectroscopy of GaAs:Cr at high magnetic fields in the field-modulation mode
4. New EPR data and photoinduced changes in GaAs: Cr. Reinterpretation of the "second-acceptor" state asCr4+
5. Investigation of the absorption ofCr2+(3d4)in GaAs
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1. Effects of fine structure of absorption spectrum and spin-singlet on zero-field-splitting parameters for BaCrSi4O10 and AgGaSe2:Cr2+;Acta Physica Sinica;2016
2. The fine structure levels and spin-singlet contributions to zero-field-splitting parameters of Cr2+ion in CdGa2S4;Philosophical Magazine;2010-03-28
3. Theoretical investigation of the local lattice structure of Cr2+ ion at tetragonal sites in GaAs semiconductor;Journal of Alloys and Compounds;2009-05
4. Optical Absorption Spectra and Dynamic Jahn-Teller Effect of V2+ Ions in ZnSe;Zeitschrift für Naturforschung A;2008-12-01
5. Influence of ligand spin–orbit coupling to theg -shift in NaCl:V2+ and NaBr:V2+;physica status solidi (b);2007-03
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