Chromium as a hole trap in GaP and GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91636
Reference12 articles.
1. EPR ofCr(3d3)in GaAs—evidence for strong Jahn-Teller effects
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3. EPR study ofFe3+andCr2+in InP
4. ESR of the doubly ionized Cr acceptor and infrared luminescence of Cr in GaP:Cr
5. Deep traps in semi-insulating GaAs: Cr revealed by photo-sensitive ESR
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1. Theoretical studies of theg-shift for Cr4+ions in GaN crystal from crystal-field and charge-transfer mechanisms;Journal of Physics: Condensed Matter;2001-08-02
2. Electrical and Optical Properties of Chromium Doped GaP;physica status solidi (a);2001-02
3. Recombination centers inGaAs/Al0.4Ga0.6Asheterostructures investigated by optically and electrically detected magnetic resonance;Physical Review B;1998-08-15
4. Poole–Frenkel effect assisted emission from deep donor level in chromium doped GaP;Applied Physics Letters;1998-01-19
5. Chapter 1 EPR and ENDOR Studies of Defects in Semiconductors;Semiconductors and Semimetals;1998
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