Direct observation of the band structure in bulk hexagonal boron nitride-Reference-Cited by-同舟云学术

Direct observation of the band structure in bulk hexagonal boron nitride

Published:2017-02-08 Issue:8 Volume:95 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Henck Hugo,Pierucci Debora,Fugallo Giorgia,Avila José,Cassabois Guillaume,Dappe Yannick J.,Silly Mathieu G.,Chen Chaoyu,Gil Bernard,Gatti Matteo,Sottile Francesco,Sirotti Fausto,Asensio Maria C.,Ouerghi Abdelkarim

Funder

Seventh Framework Programme

Labex

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.95.085410/fulltext

Reference58 articles.

1. Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

2. Boron nitride substrates for high-quality graphene electronics

3. Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

4. Direct Growth of Graphene/Hexagonal Boron Nitride Stacked Layers

5. Raman shift and electrical properties of MoS2bilayer on boron nitride substrate

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