Phase-formation diagram for precursors to epitaxial growth ofNiSi2on Si(111)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.37.4268/fulltext
Reference25 articles.
1. Atomic structure of the NiSi2/(111)Si interface
2. Real-space determination of atomic structure and bond relaxation at theNiSi2-Si(111) interface
3. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures
4. Correlation of Schottky-Barrier Height and Microstructure in the Epitaxial Ni Silicide on Si(111)
5. Summary Abstract: Schottky barrier height measurements of type A and type B NiSi2 on Si
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1. Initial growth processes of ultra-thin Ni-layers on Si(111) and electronic structure of epitaxially grown NiSi2;Surface Science;2005-08
2. Structure change of Ni(1 ML)/Si( 111 ) by post-annealing observed by atomic force microscopy, ion scattering and photoelectron spectroscopy;Surface Science;2002-06
3. Atomistic study of the formation process of Ni silicide on the Si(111)-7×7 surface with scanning tunneling microscopy;Applied Surface Science;1996-09
4. Scanning tunneling microscopy study of the interfacial structure of nickel silicides;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-03-01
5. Influence of Ni impurities at the Si‐SiO2interface on the metal‐oxide‐semiconductor characteristics;Journal of Applied Physics;1994-06
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