Initial growth processes of ultra-thin Ni-layers on Si(111) and electronic structure of epitaxially grown NiSi2
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference42 articles.
1. Ni on Si(111): Reactivity and Interface Structure
2. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures
3. Real-space determination of atomic structure and bond relaxation at theNiSi2-Si(111) interface
4. In-situ transmission electron microscopy of NiSi2 formation by molecular beam epitaxy
5. Handbook of Semiconductors;Tung,1994
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