Identifying and quantifying point defects in semiconductors using x-ray-absorption spectroscopy: Si-doped GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.10527/fulltext
Reference29 articles.
1. Studies on Group III-V Intermetallic Compounds
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