Intense THz emission in high quality MBE-grown GaAs film with a thin n-doped buffer-Reference-Cited by-同舟云学术

Intense THz emission in high quality MBE-grown GaAs film with a thin n-doped buffer

Published:2018-05-09 Issue:6 Volume:8 Page:1463
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Prieto Elizabeth Ann P.^ORCID,Vizcara Sheryl Ann B.,Lopez Lorenzo P.,Vasquez John Daniel E.,Balgos Maria Herminia M.,Hashizume Daisuke,Hayazawa Norihiko,Kim Yousoo,Tani Masahiko,Somintac Armando S.,Salvador Arnel A.,Estacio Elmer S.

Funder

Commission on Higher Education Philippine - California Advanced Research Institutes

Department of Science and Technology - Philippine Council for Industry, Energy and Emerging Technology Research and Development

Department of Science and Technology - Philippine Council for Industry, Energy and Emerging Technology Research and Development Grants-In-Aid

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Optoelectronic measurement of semiconductor surfaces and interfaces with femtosecond optics

2. Study of terahertz radiation from InAs and InSb

3. Excitation wavelength dependence of terahertz emission from semiconductor surface

4. THz emission from semiconductor surfaces

5. Angular dependence of terahertz emission from semiconductor surfaces photoexcited by femtosecond optical pulses

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