Bond-centered hydrogen in silicon studied byin situdeep-level transient spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.1716/fulltext
Reference31 articles.
1. Hydrogen-related defects in crystalline semiconductors: a theorist's perspective
2. Equilibrium sites and electronic structure of interstitial hydrogen in Si
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4. Anisotropic broadening of the linewidth in the EPR spectra ofCr3+ions in various doped yttrium aluminum garnet single crystals
5. Metastable states in Si:H
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