Equilibrium sites and electronic structure of interstitial hydrogen in Si-Reference-Cited by-同舟云学术

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Equilibrium sites and electronic structure of interstitial hydrogen in Si

Published:1987-12-15 Issue:17 Volume:36 Page:9122-9128
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Estreicher Stefan

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.36.9122/fulltext

Reference59 articles.

1. Photoluminescence recovery in rehydrogenated amorphous silicon

2. Bonding and thermal stability of implanted hydrogen in silicon

3. Vacancies and the Chemical Trapping of Hydrogen in Silicon

4. Infrared absorption of silicon irradiated by protons

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