Atomistic modeling of the(a+c)-mixed dislocation core in wurtzite GaN-Reference-Cited by-同舟云学术

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Atomistic modeling of the(a+c)-mixed dislocation core in wurtzite GaN

Published:2007-03-06 Issue:11 Volume:75 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Belabbas I.,Béré A.,Chen J.,Petit S.,Belkhir M. Akli,Ruterana P.,Nouet G.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.75.115201/fulltext

Reference48 articles.

1. Progress and prospects for GaN and the III–V nitride semiconductors

2. III–nitrides: Growth, characterization, and properties

3. Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques

4. Open‐core screw dislocations in GaN epilayers observed by scanning force microscopy and high‐resolution transmission electron microscopy

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1. The dissociation of (a+c) misfit dislocations at the InGaN/GaN interface;Journal of Microscopy;2023-10-17

2. Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing;Scientific Reports;2023-09-23

3. Development and Analysis of Thick GaN Drift Layers on 200 mm CTE-matched Substrate for Vertical device processing;2023-06-19

4. Modeling the Effects of Threading Dislocations on Current in AlGaN/GaN HEMT;Micromachines;2023-01-24

5. Comparative studies of interatomic potentials for modeling point defects in wurtzite GaN;AIP Advances;2023-01-01

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