Dynamic behavior of hydrogen in silicon nitride and oxynitride films made by low-pressure chemical vapor deposition
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.5444/fulltext
Reference25 articles.
1. Thermal-equilibrium processes in amorphous silicon
2. Electrical characteristics and hydrogen concentration of chemical vapor deposited silicon dioxide films: Effect of water treatment
3. Trap-limited hydrogen diffusion ina-Si:H
4. Oxidation of silicon (oxy)nitride and nitridation of silicon dioxide: Manifestations of the same chemical reaction system?
5. Thermal Annealing Effects on the Mechanical Properties of Plasma‐Enhanced Chemical Vapor Deposited Silicon Oxide Films
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