High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor-Reference-Cited by-同舟云学术

High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor

Published:2020 Issue:37 Volume:8 Page:13033-13039
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kim Harrison Sejoon¹²³⁴^ORCID,Hwang Su Min¹²³⁴,Meng Xin⁵²³⁴^ORCID,Byun Young-Chul¹²³⁴,Jung Yong Chan¹²³⁴,Ravichandran Arul Vigneswar¹²³⁴,Sahota Akshay⁵²³⁴^ORCID,Kim Si Joon⁶⁷⁸⁹^ORCID,Ahn Jinho¹¹⁰¹¹⁹,Lee Lance¹²¹³⁴,Zhou Xiaobing¹²¹³⁴,Hwang Byung Keun¹²¹³⁴,Kim Jiyoung¹²³⁴⁵^ORCID

Affiliation:

1. Department of Materials Science and Engineering

2. The University of Texas at Dallas

3. Richardson

4. USA

5. Department of Electrical Engineering

6. Department of Electrical and Electronics Engineering

7. Kangwon National University

8. Chuncheon-si

9. Republic of Korea

10. Hanyang University

11. Seongdong-Gu

12. DuPont

13. Midland

Abstract

Trisilylamine homolog, tris(disilanyl)amine (TDSA), is introduced as a novel precursor for the deposition of highly etch resistant silicon nitride thin films having a high growth rate at a low temperature (<300 °C) using plasma enhanced ALD process.

Funder

DuPont

National Research Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC02866E

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