Electronic properties of an electron-attractive complex neutral defect in GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.33.4424/fulltext
Reference22 articles.
1. Localization of excitons to Cu-related defects in GaAs
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3. Evidence for Luminescence Involving Arsenic Vacancy-Acceptor Centers inp-Type GaAs
4. Piezospectroscopic and magneto-optical study of the Sn-acceptor in GaAs
5. Direct evidence for the acceptorlike character of the Cu-relatedCandFbound-exciton centers in GaAs
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4. Electronic structure of the substitutional nitrogenNN1pair in GaP from photoluminescence excitation and Zeeman spectroscopy;Physical Review B;1988-07-15
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