Electronic structure of molecular-beam-epitaxy growth-induced defects in GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.37.4514/fulltext
Reference51 articles.
1. The effect of As2and As4molecular beam species on photoluminescence of molecular beam epitaxially grown GaAs
2. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
3. Acceptorlike ExcitedSStates of Excitons Bound to Nitrogen Pairs in GaP
4. New Red Pair Luminescence from GaP
5. Optical Properties of Cd-O and Zn-O Complexes in GaP
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