EL2-copper interaction in heat-treated GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.7229/fulltext
Reference18 articles.
1. Reversible electrical properties of LEC GaAs
2. Characterization of residual carbon in semi‐insulating GaAs
3. Hall‐Effect Levels Produced in Te‐Doped GaAs Crystals by Cu Diffusion
4. Complex nature of the copper acceptor in gallium arsenide
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1. Analysis of changes in the intensity of intrinsic luminescence after diffusion of copper into semi-insulating undoped gallium arsenide crystals;Semiconductors;1998-05
2. Analysis of Changes in the Intensity of the Intrinsic Luminescence after the Copper Diffusion into Semi-Insulating Undoped GaAs Crystals;Crystal Research and Technology;1998
3. Identification of Cu-related thermally stimulated current trap in undoped semi-insulating GaAs;Journal of Electronic Materials;1997-12
4. Quenching of EL2 defect-induced luminescence in gallium arsenide by copper atoms;Semiconductors;1997-09
5. Acceptor assessment and the role of carbon in semi-insulating GaAs;Applied Physics Letters;1997-02-10
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