Comparison of graphene formation on C-face and Si-face SiC {0001} surfaces-Reference-Cited by-同舟云学术

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Comparison of graphene formation on C-face and Si-face SiC {0001} surfaces

Published:2010-12-02 Issue:23 Volume:82 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Luxmi ,Srivastava N.,He Guowei,Feenstra R. M.,Fisher P. J.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.82.235406/fulltext

Reference43 articles.

1. The growth and morphology of epitaxial multilayer graphene

2. Comparative electron spectroscopic studies of surface segregation on SiC(0001) and SiC(0001̄)

3. Comparison of Epitaxial Graphene on Si-face and C-face 4H SiC Formed by Ultrahigh Vacuum and RF Furnace Production

4. The SiC(0001)6√3 × 6√3 reconstruction studied with STM and LEED

5. Imaging the interface of epitaxial graphene with silicon carbide via scanning tunneling microscopy

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