Comparison of Epitaxial Graphene on Si-face and C-face 4H SiC Formed by Ultrahigh Vacuum and RF Furnace Production
Author:
Affiliation:
1. U.S. Naval Research Laboratory, Electronics Science and Technology Division Code 6800, 4555 Overlook Avenue SW, Washington, DC 20375
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl900803z
Reference26 articles.
1. Substrate-induced bandgap opening in epitaxial graphene
2. Operation of Graphene Transistors at Gigahertz Frequencies
3. Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics
4. Epitaxial graphene
Cited by 134 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ultrafine Si evaporation control technology to inhibit the island nucleation of epitaxial graphene on SiC (000-1);Journal of Crystal Growth;2024-09
2. Modification on Flower Defects and Electronic Properties of Epitaxial Graphene by Erbium;ACS Omega;2023-09-29
3. Rapid direct growth of graphene on single-crystalline diamond using nickel as catalyst;Thin Solid Films;2023-04
4. Structural identification of graphene films and nanoislands on 6H-SiC(0001) by direct height measurement;Nanotechnology;2023-02-09
5. Anomalous wrinkle propagation in polycrystalline graphene with tilt grain boundaries;Physical Chemistry Chemical Physics;2023
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3