Study on graphene grown on SiC substrate by heat-sublimation method applied for NO2 gas sensor fabrication

Abstract

This article aimed to build a low-cost system and synthesized graphene on 4H-silicon carbide (4H-SiC) wafer by the thermal sublimation method toward the gas-sensing applications. The advantage of this epitaxy growth obtained the large-area graphene sheet on 4H-SiC substrate. The graphene layers were grown directly on a semiconductor material without the complicated transfer process as previous methods, making this method suitable to fabricate the electronic devices, MEMS, and sensors. The characterization of graphene on 4H-SiC (Graphene@SiC) was analyzed by various methods of surface morphology, structure, and spectroscopy. The low sheet resistance ([Formula: see text]) with large area of Graphene@SiC had the attention for application in gas sensor. While exposed to the nitrogen dioxide gas, the resistivity of Graphene@SiC sample also was changed. It is the hope of a designed gas sensor in future.