Free-carrier and intersubband infrared absorption inp-typeSi1−xGex/Si multiple quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.14311/fulltext
Reference17 articles.
1. Intersubband absorption in Si1−xGex/Si multiple quantum wells
2. Normal incidence infrared detector usingp‐type SiGe/Si multiple quantum wells
3. Intervalence‐subband transition in SiGe/Si multiple quantum wells−normal incident detection
4. Broadband (8–14 μm), normal incidence, pseudomorphic GexSi1−x/Si strained‐layer infrared photodetector operating between 20 and 77 K
5. Bound‐to‐bound intersubband transitions in a δ‐dopedp‐type Si/SixGe1−x/Si quantum well
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3. Theoretical investigation of intersubband hole transitions in Si/SiGe/Si quantum wells;Journal of Applied Physics;2002-09
4. Infrared absorption inSi/Si1−xGex/Siquantum wells;Physical Review B;2001-08-08
5. Evaluation of the infrared absorption in nm-thick heavily boron-doped Si1-xGex layers on silicon;Journal of Materials Science: Materials in Electronics;2001
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