Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference20 articles.
1. Normal incidence hole intersubband absorption long wavelength GaAs/AlxGa1−xAs quantum well infrared photodetectors
2. Infrared detectors reach new lengths
3. Polarization-dependent intersubband absorption and normal-incidence infrared detection in p-type Si/SiGe quantum wells
4. Si1?XGeX/Si quantum well infrared photodetectors
5. Si1−xGex/Si multiple quantum well infrared detector
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